Properties of short-channel devices with thin gate oxides

MOS devices with short-channel and thin gate oxides were fabricated to investigate the dependence of the electrical properties of these devices on the oxide thickness. The measured dependence of VTand IDon channel length, gate-oxide thickness, and channel doping shows a very complicated interrelationship among these parameters. This observation suggests that the current models adopted for simulation must be modified to accommodate submicrometer devices with very thin gate oxides.