DocumentCode :
1109583
Title :
A Poisson C-V profiler
Author :
Blacksin, Jeffrey M.
Author_Institution :
Digital Equipment Corporation, Hudson, MA
Volume :
33
Issue :
9
fYear :
1986
fDate :
9/1/1986 12:00:00 AM
Firstpage :
1387
Lastpage :
1389
Abstract :
The determination of doping profiles from MOS 
curves has previously been calculated by the use of the depletion approximation and other correction techniques. A method is presented based upon solving Poisson\´s equation for the charge distribution of an assumed doping profile, calculating the capacitance from that doping profile, and allowing an iterative calculation of the doping profile to produce the desired curve.
curves has previously been calculated by the use of the depletion approximation and other correction techniques. A method is presented based upon solving Poisson\´s equation for the charge distribution of an assumed doping profile, calculating the capacitance from that doping profile, and allowing an iterative calculation of the doping profile to produce the desired curve.Keywords :
Capacitance-voltage characteristics; Doping profiles; Electron devices; High speed optical techniques; Optical fiber communication; Optical fiber networks; Optical receivers; Photodiodes; Poisson equations; Pulse measurements;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22676
Filename :
1485893
Link To Document :
