Title :
Implanted-Silicided polysilicon gates for VLSI transistors
Author_Institution :
Hewlett-Packard Laboratories, Palo Alto, CA
fDate :
9/1/1986 12:00:00 AM
Abstract :
Polysilicon MOS capacitors, silicided with titanium-silicide, and implanted with BF2or arsenic, were investigated to determine if low doping concentrations can be used to predictably set flat-band voltages. Experimental results show the flat-band voltages, for both arsenic- and BF2-implanted polysilicon, to be approximately equal to highly doped polysilicon and without any appreciable dependency on dose levels.
Keywords :
Annealing; Electrical resistance measurement; Electron devices; Fingers; Implants; Integrated circuit interconnections; MOS capacitors; MOSFETs; Very large scale integration; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22678
