• DocumentCode
    1109603
  • Title

    Implanted-Silicided polysilicon gates for VLSI transistors

  • Author

    Peters, Dan

  • Author_Institution
    Hewlett-Packard Laboratories, Palo Alto, CA
  • Volume
    33
  • Issue
    9
  • fYear
    1986
  • fDate
    9/1/1986 12:00:00 AM
  • Firstpage
    1391
  • Lastpage
    1393
  • Abstract
    Polysilicon MOS capacitors, silicided with titanium-silicide, and implanted with BF2or arsenic, were investigated to determine if low doping concentrations can be used to predictably set flat-band voltages. Experimental results show the flat-band voltages, for both arsenic- and BF2-implanted polysilicon, to be approximately equal to highly doped polysilicon and without any appreciable dependency on dose levels.
  • Keywords
    Annealing; Electrical resistance measurement; Electron devices; Fingers; Implants; Integrated circuit interconnections; MOS capacitors; MOSFETs; Very large scale integration; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22678
  • Filename
    1485895
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1109603