Title :
All-silicon active and passive guided-wave components for λ = 1.3 and 1.6 µm
Author :
Soref, Richard A. ; Larenzo, J.
Author_Institution :
USAF Rome Lab., Hanscom Air Force Base, MA, USA
fDate :
6/1/1986 12:00:00 AM
Abstract :
End-coupled planar and channel waveguides at 1.3 μm have been demonstrated in single-crystal Si layers grown epitaxially on heavily doped Si substrates, and an optical power divider consisting of intersecting channels was designed and fabricated. Optical switches in Si based on electrooptic, acoustooptic, and optical-injection mechanisms are described. The advantages of all-silicon integrated optical components are discussed.
Keywords :
Electrooptic switches; Epitaxial growth; Integrated optoelectronics; Optical planar waveguide components; Optical strip waveguide components; Conductors; Electron mobility; Electrooptical waveguides; High speed optical techniques; Optical devices; Optical scattering; Optical switches; Optical waveguides; Silicon; Substrates;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1986.1073057
