DocumentCode
1109626
Title
All-silicon active and passive guided-wave components for λ = 1.3 and 1.6 µm
Author
Soref, Richard A. ; Larenzo, J.
Author_Institution
USAF Rome Lab., Hanscom Air Force Base, MA, USA
Volume
22
Issue
6
fYear
1986
fDate
6/1/1986 12:00:00 AM
Firstpage
873
Lastpage
879
Abstract
End-coupled planar and channel waveguides at 1.3 μm have been demonstrated in single-crystal Si layers grown epitaxially on heavily doped Si substrates, and an optical power divider consisting of intersecting channels was designed and fabricated. Optical switches in Si based on electrooptic, acoustooptic, and optical-injection mechanisms are described. The advantages of all-silicon integrated optical components are discussed.
Keywords
Electrooptic switches; Epitaxial growth; Integrated optoelectronics; Optical planar waveguide components; Optical strip waveguide components; Conductors; Electron mobility; Electrooptical waveguides; High speed optical techniques; Optical devices; Optical scattering; Optical switches; Optical waveguides; Silicon; Substrates;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1986.1073057
Filename
1073057
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