• DocumentCode
    1109627
  • Title

    Hot-electron effects on channel thermal noise in fine-line NMOS field-effect transistors

  • Author

    Jindal, R.P.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, NJ
  • Volume
    33
  • Issue
    9
  • fYear
    1986
  • fDate
    9/1/1986 12:00:00 AM
  • Firstpage
    1395
  • Lastpage
    1397
  • Abstract
    Submicrometer NMOSFET´s exhibit excess channel thermal noise. This excess noise increases with an increase in drain-to-source voltage and a decrease in channel length. A strong correlation between high electric field and excess noise strongly suggests hot electrons as being responsible for this excess noise.
  • Keywords
    FETs; Frequency measurement; Heating; Hot carriers; MOS devices; MOSFET circuits; Noise measurement; Silicon; Testing; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22680
  • Filename
    1485897
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1109627