• DocumentCode
    1109683
  • Title

    High-performance 1.5 μm GaInNAsSb lasers grown on GaAs

  • Author

    Bank, S.R. ; Wistey, M.A. ; Goddard, L.L. ; Yuen, H.B. ; Bae, H.P. ; Harris, J.S.

  • Author_Institution
    Solid State & Photonics Lab, Stanford Univ., CA, USA
  • Volume
    40
  • Issue
    19
  • fYear
    2004
  • Firstpage
    1186
  • Lastpage
    1187
  • Abstract
    Substantially reduced threshold current density and improved efficiency in long-wavelength (>1.4 μm) GaAs-based lasers are reported. A 20×1220 μm as-cleaved device showed a room temperature continuous-wave threshold current density of 580 A/cm2, external efficiency of 53%, and 200 mW peak output power at 1.5 μm. The pulsed threshold current density was 450 A/cm2 with 1145 mW peak output power.
  • Keywords
    III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; semiconductor quantum wells; wide band gap semiconductors; 1.5 micron; 1145 mW; 200 mW; 53 percent; GaAs; GaAs-based lasers; GaInNAsSb; GaInNAsSb lasers; continuous-wave threshold current density; external efficiency; high-performance dilute nitride laser; peak output power; pulsed threshold current density; room temperature;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20046270
  • Filename
    1336642
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1109683