DocumentCode
1109707
Title
A model-base comparison: GaAs/GaAlAs HBT versus silicon bipolar
Author
Kurata, Mamoru ; Katoh, Riichi ; Yoshida, Jiro ; Akagi, Junko
Author_Institution
Toshiba Corporation, Kawasaki, Japan
Volume
33
Issue
10
fYear
1986
fDate
10/1/1986 12:00:00 AM
Firstpage
1413
Lastpage
1420
Abstract
A pure model-base comparison is made between the GaAs/ GaAlAs HBT and the silicon bipolar transistor for the high-speed switching performance under ring oscillator operation. Full utilization is made of our own modeling tools, which include a "physical" one-dimensional transistor model, a hybrid model to represent a realistic device structure, and a circuit simulator to allow direct access to the physical model. Delay time versus power characteristics, as well as dynamic carrier profiles are demonstrated, with discussion about limiting factors for the switching speed.
Keywords
Bipolar transistors; Charge carrier processes; Circuits; Curve fitting; Electron mobility; Gallium arsenide; Heterojunction bipolar transistors; Photonic band gap; Ring oscillators; Silicon;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1986.22688
Filename
1485905
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