• DocumentCode
    1109719
  • Title

    Analysis of noise margin and speed of GaAs MESFET DCFL using UM-SPICE

  • Author

    Hyun, C.H. ; Shur, Michael S. ; Peczalski, Andrzej

  • Author_Institution
    University of Minnesota, Minneapolis, MN
  • Volume
    33
  • Issue
    10
  • fYear
    1986
  • fDate
    10/1/1986 12:00:00 AM
  • Firstpage
    1421
  • Lastpage
    1426
  • Abstract
    Using a customized GaAs IC circuit simulator (UM-SPICE) the design trade-offs and process sensitivity of the logic levels, noise margin, and propagation delay for GaAs direct coupled field effect logic (DCFL) gates are analyzed. The results of the circuit simulation are shown to be in good agreement with our experimental data. For DCFL gates with ungated FET loads studied here, the noise margin is found to be the more important design criteria. The noise margin is a sensitive function of both the driver-to-load current ratio and the driver threshold voltage, whereas the propagation delay remains fairly constant over a wide range of driver-to-load ratios and threshold voltages. Our simulations indicate that a driver-to-load ratio of about 5 and a threshold voltage of about 0.1 V would offer the optimum performance for most applications. Also, the DCFL design with shallow channel transistor appears to be less sensitive to the substrate or implantation variations.
  • Keywords
    Analytical models; Circuit noise; Gallium arsenide; Integrated circuit modeling; Integrated circuit noise; Logic circuits; Logic design; MESFETs; Propagation delay; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22689
  • Filename
    1485906