Title :
Zener current contribution to the resistance-area product of 8- to 14-µm Hg1-xCdxTe photodiodes
Author :
Gopal, Vishnu ; Dhar, Vikram
Author_Institution :
Solid State Physics Laboratory, Delhi, India
fDate :
10/1/1986 12:00:00 AM
Abstract :
The effect of Zener current, due to the internal field emission in the space-charge region of an n+-p junction, on the zero-bias resistance-area product RoA of narrow-bandgap HgCdTe photodiodes has been investigated theoretically. It is shown that the contribution of this mechanism in these photodiodes could appreciably lower the RoA product in the temperature range of 10 to 100 K.
Keywords :
Charge coupled devices; Diodes; Electrons; Impedance; Leakage current; Mercury (metals); Photodiodes; Radiation detectors; Temperature distribution; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22698
