• DocumentCode
    1109831
  • Title

    Zener current contribution to the resistance-area product of 8- to 14-µm Hg1-xCdxTe photodiodes

  • Author

    Gopal, Vishnu ; Dhar, Vikram

  • Author_Institution
    Solid State Physics Laboratory, Delhi, India
  • Volume
    33
  • Issue
    10
  • fYear
    1986
  • fDate
    10/1/1986 12:00:00 AM
  • Firstpage
    1489
  • Lastpage
    1493
  • Abstract
    The effect of Zener current, due to the internal field emission in the space-charge region of an n+-p junction, on the zero-bias resistance-area product RoA of narrow-bandgap HgCdTe photodiodes has been investigated theoretically. It is shown that the contribution of this mechanism in these photodiodes could appreciably lower the RoA product in the temperature range of 10 to 100 K.
  • Keywords
    Charge coupled devices; Diodes; Electrons; Impedance; Leakage current; Mercury (metals); Photodiodes; Radiation detectors; Temperature distribution; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22698
  • Filename
    1485915
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1109831