Title :
Raman emission in porous silicon at 1.54 μm
Author :
Sirleto, L. ; Raghunatan, V. ; Rossi, A. ; Jalali, B.
Author_Institution :
Inst. for Microelectron. & Microsystems, Italian Nat. Res. Council, Napoli, Italy
Abstract :
There have been many reports regarding visible luminescence and light emission at 1.54 μm, at room temperature, from porous silicon and from Er-doped porous silicon, respectively. Described is a different approach, based on Raman scattering in porous silicon, to generate radiation at 1.54 μm. Preliminary experimental results regarding Raman emission in porous silicon samples at 1.54 μm are also reported.
Keywords :
Raman spectra; elemental semiconductors; luminescence; porous semiconductors; silicon; 1.54 micron; 293 to 298 K; Raman emission; Raman scattering; Si; light emission; porous silicon; room temperature; visible luminescence;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20045284
