• DocumentCode
    1109961
  • Title

    Raman emission in porous silicon at 1.54 μm

  • Author

    Sirleto, L. ; Raghunatan, V. ; Rossi, A. ; Jalali, B.

  • Author_Institution
    Inst. for Microelectron. & Microsystems, Italian Nat. Res. Council, Napoli, Italy
  • Volume
    40
  • Issue
    19
  • fYear
    2004
  • Firstpage
    1221
  • Lastpage
    1222
  • Abstract
    There have been many reports regarding visible luminescence and light emission at 1.54 μm, at room temperature, from porous silicon and from Er-doped porous silicon, respectively. Described is a different approach, based on Raman scattering in porous silicon, to generate radiation at 1.54 μm. Preliminary experimental results regarding Raman emission in porous silicon samples at 1.54 μm are also reported.
  • Keywords
    Raman spectra; elemental semiconductors; luminescence; porous semiconductors; silicon; 1.54 micron; 293 to 298 K; Raman emission; Raman scattering; Si; light emission; porous silicon; room temperature; visible luminescence;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20045284
  • Filename
    1336684
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1109961