Title :
Measurement of the minority-carrier diffusion length in thin semiconductor films
Author :
Chiang, Ching-Lang ; Schwarz, Reinhard ; Slobodin, David E. ; Kolodzey, James ; Wagner, Sigurd
Author_Institution :
Intel Corp., Santa Clara, CA
fDate :
10/1/1986 12:00:00 AM
Abstract :
The general surface photovoltage theory is derived for thin semiconductor films with barriers on both the front and back surfaces. The calculated surface photovoltage spectrum and its bias-light dependence are compared to measurements made in hydrogenated amorphous silicon samples. Necessary precautions for the determination of the minority-carrier diffusion length are discussed.
Keywords :
Amorphous materials; Helium; Length measurement; Optical films; Optical surface waves; Semiconductor films; Silicon; Steady-state; Surface waves; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22711
