DocumentCode :
11100
Title :
Comparison of Polished and Dry Etched Semipolar 
III-Nitride Laser Facets
Author :
Po Shan Hsu ; Farrell, R.M. ; Weaver, Jeremiah J. ; Fujito, K. ; DenBaars, Steven P. ; Speck, James S. ; Nakamura, Shigenari
Author_Institution :
Mater. Dept. & Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, Santa Barbara, CA, USA
Volume :
25
Issue :
21
fYear :
2013
fDate :
Nov.1, 2013
Firstpage :
2105
Lastpage :
2107
Abstract :
We compare facet morphology, device characteristics, and far field patterns (FFPs) for semipolar (112̅2) laser diodes fabricated with mechanically polished and dry etched mirror facets. Facets formed by Cl2-based dry etching produced inclined and heavily striated facets. Mechanically polished facets, in contrast, provided vertical and smooth facets (rms roughness=5.2 nm). The threshold currents of polished facet devices were on average ~ 100 and ~ 200 mA lower than etched facet devices (2 × 1200 μm2 and 4 × 1200 μm2 dimension devices, respectively). FFPs from etched facets were also shown to be obscured due to substrate reflections.
Keywords :
III-V semiconductors; etching; gallium compounds; laser mirrors; optical fabrication; polishing; semiconductor lasers; surface morphology; surface roughness; wide band gap semiconductors; GaN; device characteristics; dry etched mirror facets; dry etching; facet morphology; far field patterns; laser diodes; mechanical polishing; optical fabrication; semipolar (112̅2) III-nitride laser facets; surface roughness; threshold currents; Diode lasers; Dry etching; Gallium nitride; Mirrors; Physics; Substrates; Threshold current; Facets; GaN; III-nitride; lasers; nonpolar; semipolar;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2013.2281608
Filename :
6600954
Link To Document :
