DocumentCode :
1110025
Title :
Constant-current contour plot for the description of short-channel effects of MOS transistors
Author :
Kim, Choong-ki ; Goodwin-johansson, Scott ; Sharma, Dinesh
Author_Institution :
Korea Advanced Institute of Science and Technology, Seoul, Korea
Volume :
33
Issue :
10
fYear :
1986
fDate :
10/1/1986 12:00:00 AM
Firstpage :
1619
Lastpage :
1621
Abstract :
A constant-current contour plot in the V_{ds}-V_{gs} plane is proposed as a means of describing short-channel behavior of MOS transistors. Characteristics of the constant-current contour plot are presented and related to short-channel behavior. As an example, short-channel behavior of a typical NMOS technology is described utilizing constant-current contour plots that are generated from the I-V data obtained by two-dimensional device simulation.
Keywords :
Electron devices; Linear approximation; MOS devices; MOSFET circuits; Microelectronics; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22715
Filename :
1485932
Link To Document :
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