• DocumentCode
    1110035
  • Title

    Significance of the channel—Charge partition in the transient MOSFET model

  • Author

    Fossum, J.G. ; Jeong, H. ; Veeraraghavan, S.

  • Author_Institution
    University of Florida, Gainesville, FL
  • Volume
    33
  • Issue
    10
  • fYear
    1986
  • fDate
    10/1/1986 12:00:00 AM
  • Firstpage
    1621
  • Lastpage
    1623
  • Abstract
    Physical insight regarding charge-based transient MOSFET modeling is developed to reveal the significance of the channel-charge partition. Components (charging, displacement, transport, and convection) of transient channel current are discussed in terms of charge (actual and model), and clarification concerning "nonreciprocal capacitance" and origins of error in quasi-static models is given.
  • Keywords
    Admittance; Capacitance; Circuit simulation; Computer errors; Computer simulation; FETs; MOSFET circuits; SPICE; Uncertainty; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22716
  • Filename
    1485933
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1110035