Title :
Reverse breakdown in GaAs MESFET´s
Author :
Zaitlin, Mark P.
Author_Institution :
Raytheon Company, Lexington, MA
fDate :
11/1/1986 12:00:00 AM
Abstract :
A simple numerical technique for calculating reverse breakdown voltage in GaAs MESFET´s is described. The breakdown voltage is determined from an integral over the ionization rate and requires only a small amount of computing time, allowing a variety of structures to be studied. The effects of a gate recess and n+layer, the surface potential, buried channel layers, and AlGaAs spacer layers underneath the gate are investigated.
Keywords :
Dielectric breakdown; Doping; Electric breakdown; FETs; Gallium arsenide; Geometry; Ionization; MESFETs; Poisson equations; Semiconductor process modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22721
