Title :
A Highly Integrated 1-Bit Phase Shifter Based on High-Pass/Low-Pass Structure
Author :
In Sang Song ; Giwan Yoon ; Chul Soon Park
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
Abstract :
This letter presents a highly integrated 1-bit 90 ° phase shifter based on high-pass/low-pass structure for 60 GHz beamforming applications using a standard 65 nm CMOS process. In order to overcome the limitation of the conventional low-pass only phase shifter, the combination of high-pass/low-pass network was utilized as a 1-bit phase shifter. By integrating a high pass network into the low-pass network with low loss single-pole single throw (SPST) switches that adapt a resistive body floating technique, the proposed phase shifter achieves average 5 dB IL and less than ±0.18 dB of insertion loss flatness and 1 dB rms amplitude error over the whole band in a small chip area of 0.16 mm 2 including pads.
Keywords :
CMOS integrated circuits; array signal processing; millimetre wave phase shifters; switches; CMOS process; SPST switch; amplitude error; beamforming application; complementary metal oxide semiconductor; frequency 60 GHz; high-pass structure; insertion loss; low-pass structure; phase shifter; resistive body floating technique; single-pole single throw switch; size 65 nm; word length 1 bit; CMOS integrated circuits; Inductors; Insertion loss; Millimeter wave technology; Phase measurement; Phase shifters; Wireless communication; 60 GHz; Beamforming; CMOS; phase shifter;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2015.2440777