Title :
Ultra-wideband, high-dynamic range, low loss GaN HEMT mixer
Author :
Kang, Jiawen ; Kurdoghlian, A. ; Margomenos, A. ; Moyer, H.P. ; Brown, Dean ; McGuire, C.
Author_Institution :
HRL Lab., LLC, Malibu, CA, USA
Abstract :
An ultra-wideband double-balanced resistive mixer with high dynamic range (IIP3) is reported. The mixer is designed and fabricated using HRL Laboratory´s GaN high electron mobility transistor (HEMT) (T2) process and it utilises a series resistor-capacitor circuit network termination to the device gate, in order to achieve resonance-free broadband conversion loss and high dynamic range. The measured conversion loss from 3 to 40 GHz is between 5.5 and 8.5 dB at 1 GHz intermediate frequency. Large signal testing at 15 GHz showed a 1 dB gain compression point (P1dB) of 22 dBm.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; millimetre wave mixers; wide band gap semiconductors; GaN; HRL high electron mobility transistor T2 process; IIP3; device gate; frequency 1 GHz; frequency 3 GHz to 40 GHz; gain 1 dB; high dynamic range; low loss HEMT mixer; resonance free broadband conversion loss; series RC network termination; ultrawideband double-balanced resistive mixer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2013.4135
