DocumentCode
1110180
Title
Partition noise in CCD signal detection
Author
Teranishi, Nobukazu ; Mutoh, Nobuhiko
Author_Institution
NEC Corporation, Kawasaki, Japan
Volume
33
Issue
11
fYear
1986
fDate
11/1/1986 12:00:00 AM
Firstpage
1696
Lastpage
1701
Abstract
Reset noise in CCD signal charge detection is analyzed experimentally and theoretically. From a reset noise measurement experiment, it has been inferred that reset noise consists of two parts: the sensing capacitance (Cs ) dependent part and the effective reset channel length (
) dependent part. Conventional reset noise theory, where the Johnson noise in the reset MOS channel was regarded as the only noise source, agrees with the Cs dependent part of measured reset noise. However, it cannot explain the L dependent part. To explain the
dependence, the authors propose "partition noise" caused by carrier partition in the reset MOS channel. Partition noise is analyzed by the unique technique of solving the one-dimensional diffusion equation. As a result, a reset channel capacitance dependent characteristic for partition noise has been derived, which agrees with the
dependent part for measured reset noise. Consequently, in addition to Johnson noise, partition noise is found to be a noise source in CCD signal detection.
) dependent part. Conventional reset noise theory, where the Johnson noise in the reset MOS channel was regarded as the only noise source, agrees with the C
dependence, the authors propose "partition noise" caused by carrier partition in the reset MOS channel. Partition noise is analyzed by the unique technique of solving the one-dimensional diffusion equation. As a result, a reset channel capacitance dependent characteristic for partition noise has been derived, which agrees with the
dependent part for measured reset noise. Consequently, in addition to Johnson noise, partition noise is found to be a noise source in CCD signal detection.Keywords
Capacitance measurement; Capacitance-voltage characteristics; Charge coupled devices; Charge-coupled image sensors; Equations; Noise measurement; Semiconductor device measurement; Signal analysis; Signal detection; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1986.22730
Filename
1485947
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