• DocumentCode
    1110241
  • Title

    Implementation of digital IC functions with pass transistor switching circuits

  • Author

    Lau, K.T.

  • Author_Institution
    Nanyang Technol. Inst., Singapore
  • Volume
    34
  • Issue
    2
  • fYear
    1988
  • fDate
    5/1/1988 12:00:00 AM
  • Firstpage
    318
  • Lastpage
    320
  • Abstract
    The author implements a modified Karnaugh map minimization procedure for pass transistors. The savings in silicon area depends on the transistor count as well as the interconnect structure. Examples demonstrate that considerable savings in silicon area can be achieved by using pass logic instead of gate logic. The savings amount to an 80% reduction in silicon area for NMOS and 6% reduction for CMOS. This means that more die can be fabricated on a silicon wafer, leading to a reduction in product development costs
  • Keywords
    CMOS integrated circuits; field effect integrated circuits; integrated logic circuits; switching circuits; CMOS; Karnaugh map minimization; NMOS; Si; digital IC; pass logic; pass transistor switching circuits; wafer; CMOS logic circuits; CMOS technology; Digital integrated circuits; Large scale integration; Logic gates; MOS devices; MOSFETs; Switching circuits; Threshold voltage; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Consumer Electronics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0098-3063
  • Type

    jour

  • DOI
    10.1109/30.2947
  • Filename
    2947