DocumentCode
1110330
Title
Evaluation of grain boundary recombination velocity in polycrystalline silicon from the spectral response of Schottky-barrier solar cells
Author
Dimitriadis, Charalabios A.
Author_Institution
University of Thessaloniki, Thessaloniki, Greece
Volume
33
Issue
11
fYear
1986
fDate
11/1/1986 12:00:00 AM
Firstpage
1806
Lastpage
1808
Abstract
A method based on the spectral response of polycrystalline semiconductor photovoltaic cells for evaluation of the grain boundary recombination velocity (SGB ) is presented. The wavelength of the maximum of the spectral response, for a polycrystalline semiconductor with known grain size, depends on SGB . By comparison of the experimental with the theoretical wavelength of the maximum of the spectral response, it is possible to determine the grain boundary recombination velocity.
Keywords
Conductors; Grain boundaries; Grain size; Photovoltaic cells; Photovoltaic systems; Radiative recombination; Rain; Schottky diodes; Semiconductor diodes; Silicon;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1986.22744
Filename
1485961
Link To Document