• DocumentCode
    1110330
  • Title

    Evaluation of grain boundary recombination velocity in polycrystalline silicon from the spectral response of Schottky-barrier solar cells

  • Author

    Dimitriadis, Charalabios A.

  • Author_Institution
    University of Thessaloniki, Thessaloniki, Greece
  • Volume
    33
  • Issue
    11
  • fYear
    1986
  • fDate
    11/1/1986 12:00:00 AM
  • Firstpage
    1806
  • Lastpage
    1808
  • Abstract
    A method based on the spectral response of polycrystalline semiconductor photovoltaic cells for evaluation of the grain boundary recombination velocity (SGB) is presented. The wavelength of the maximum of the spectral response, for a polycrystalline semiconductor with known grain size, depends on SGB. By comparison of the experimental with the theoretical wavelength of the maximum of the spectral response, it is possible to determine the grain boundary recombination velocity.
  • Keywords
    Conductors; Grain boundaries; Grain size; Photovoltaic cells; Photovoltaic systems; Radiative recombination; Rain; Schottky diodes; Semiconductor diodes; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22744
  • Filename
    1485961