DocumentCode :
1110330
Title :
Evaluation of grain boundary recombination velocity in polycrystalline silicon from the spectral response of Schottky-barrier solar cells
Author :
Dimitriadis, Charalabios A.
Author_Institution :
University of Thessaloniki, Thessaloniki, Greece
Volume :
33
Issue :
11
fYear :
1986
fDate :
11/1/1986 12:00:00 AM
Firstpage :
1806
Lastpage :
1808
Abstract :
A method based on the spectral response of polycrystalline semiconductor photovoltaic cells for evaluation of the grain boundary recombination velocity (SGB) is presented. The wavelength of the maximum of the spectral response, for a polycrystalline semiconductor with known grain size, depends on SGB. By comparison of the experimental with the theoretical wavelength of the maximum of the spectral response, it is possible to determine the grain boundary recombination velocity.
Keywords :
Conductors; Grain boundaries; Grain size; Photovoltaic cells; Photovoltaic systems; Radiative recombination; Rain; Schottky diodes; Semiconductor diodes; Silicon;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22744
Filename :
1485961
Link To Document :
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