• DocumentCode
    1110375
  • Title

    Charge control mechanism in MODFET´s: A theoretical analysis

  • Author

    Khondker, A.N. ; Anwar, A.F.M. ; Islam, M.A. ; Limoncelli, L. ; Wilson, D.

  • Author_Institution
    Clarkson University, Potsdam, NY
  • Volume
    33
  • Issue
    11
  • fYear
    1986
  • fDate
    11/1/1986 12:00:00 AM
  • Firstpage
    1825
  • Lastpage
    1826
  • Abstract
    A new approach to the theory of the charge control mechanism in modulation-doped transistors (MODFET´s) is presented. The present theory takes into account quantum mechanical results for the average separation of the two-dimensional electron gas from the Al1-xGaxAs/GaAs interface. A physical interpretation to the effective thickness of the input capacitor is also discussed.
  • Keywords
    Channel bank filters; Electrons; Epitaxial layers; FETs; Gallium arsenide; HEMTs; MODFETs; Quantum mechanics; Voltage control; Wave functions;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22748
  • Filename
    1485965
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1110375