• DocumentCode
    1110393
  • Title

    Photogeneration and recombination in a bulk barrier phototransistor

  • Author

    Chang, C.Y.

  • Author_Institution
    National Cheng Kung University, Tainan, Taiwan, Republic of China
  • Volume
    33
  • Issue
    11
  • fYear
    1986
  • fDate
    11/1/1986 12:00:00 AM
  • Firstpage
    1829
  • Lastpage
    1830
  • Abstract
    Photogeneration and recombination processes have been taken into consideration for the amorphous silicon bulk barrier phototransistors. Based on the developed model, optimum conditions to obtain maximum gain are reported and are experimentally verified. Trapping in the collector updoped region and at the minimum of the valance band barrier play an important role in the current gain and the response speed.
  • Keywords
    Amorphous silicon; Charge carrier processes; Electrodes; Electron emission; Gallium arsenide; Glass; Lighting; Niobium; Phototransistors; Radiative recombination;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22750
  • Filename
    1485967
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1110393