Calculation of the two-dimensional electron gas density at the AlxGa1-xAs/GaAs heterointerface

Using the Fermi-Dirac statistics and the numerical calculation method, the two-dimensional electron gas density at the unbiased semi-infinite AlxGa1-xAs/GaAs heterointerface is calculated. With the donor concentration, the undoped AlxGa1-xAs layer thickness, the temperature, and some parameters dependent on the Al mole fraction, the results of the numerical calculation show that this brief describes well the characteristics at the heterointerface, and they are in good agreement with the experimental data.