Title :
IIA-5 light and thermal sensitivity studies on three novel AlGaAs/GaAs 2 DEG structures: HIGFET, pulsed-doped MODFET, and superlattice MODFET
Author :
Abrokwah, J.K. ; Arch, D.K.
fDate :
11/1/1986 12:00:00 AM
Keywords :
Doping; Epitaxial layers; FETs; Gallium arsenide; HEMTs; Insulation; MODFET circuits; Pulse amplifiers; Superlattices; Temperature sensors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22760
