IIA-5 light and thermal sensitivity studies on three novel AlGaAs/GaAs 2 DEG structures: HIGFET, pulsed-doped MODFET, and superlattice MODFET

Author

Abrokwah, J.K. ; Arch, D.K.

Volume

Issue

fYear

1986

fDate

11/1/1986 12:00:00 AM

Firstpage

1839

Lastpage

1839

Keywords

Doping; Epitaxial layers; FETs; Gallium arsenide; HEMTs; Insulation; MODFET circuits; Pulse amplifiers; Superlattices; Temperature sensors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

DOI

10.1109/T-ED.1986.22760

Filename

1485977

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