DocumentCode :
1110511
Title :
IIA-6 modulation-doped field-effect transistors utilizing superlattice AlGaAs/n
+
-GaAs charge-control layers
Author :
Arch, D.K. ; Abrokwah, J.K. ; Vold, P.J. ; Fraasch, A.M. ; Shur, Michael S. ; Xu, Jie
Volume :
33
Issue :
11
fYear :
1986
fDate :
11/1/1986 12:00:00 AM
Firstpage :
1839
Lastpage :
1840
Keywords :
Epitaxial layers; FETs; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFET circuits; Power dissipation; Superlattices; Threshold voltage; Voltage control;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22761
Filename :
1485978
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1110511
