Title :
IIA-4 A study of p-channel AlGaAs/GaAs MIS-like heterostructure FET´s
Author :
Oe, Katsutoshi ; Hirano, Masahiro ; Yanagawa, Fumiki
fDate :
11/1/1986 12:00:00 AM
Keywords :
Circuits; Doping; Electrons; FETs; Gallium arsenide; HEMTs; MODFETs; Pulse amplifiers; Superlattices; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22762
