• DocumentCode
    1110535
  • Title

    IIA-8 Heterostructure gates for enhancement-mode InGaAs FET´s

  • Author

    Feuer, Mark D. ; Chang, T.Y. ; Shunk, S.C.

  • Volume
    33
  • Issue
    11
  • fYear
    1986
  • fDate
    11/1/1986 12:00:00 AM
  • Firstpage
    1840
  • Lastpage
    1840
  • Keywords
    CMOS process; CMOS technology; Capacitance measurement; FETs; Gallium arsenide; Indium gallium arsenide; Semiconductor diodes; Silicon; Temperature measurement; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1986.22764
  • Filename
    1485981
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1110535