Title :
IIA-8 Heterostructure gates for enhancement-mode InGaAs FET´s
Author :
Feuer, Mark D. ; Chang, T.Y. ; Shunk, S.C.
fDate :
11/1/1986 12:00:00 AM
Keywords :
CMOS process; CMOS technology; Capacitance measurement; FETs; Gallium arsenide; Indium gallium arsenide; Semiconductor diodes; Silicon; Temperature measurement; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22764
