DocumentCode :
1110543
Title :
IIA-7 InGaAs gate GaAs SIS FET with controllable threshold voltage
Author :
Matsumoto, Kaname ; Ogura, M. ; Wada, Tomotaka ; Hayashi, Yasuhiro ; Hashizume, Nobuya ; Fukuhara, N. ; Miyashita, Tadakazu
Volume :
33
Issue :
11
fYear :
1986
fDate :
11/1/1986 12:00:00 AM
Firstpage :
1840
Lastpage :
1840
Keywords :
FETs; Gallium arsenide; Indium gallium arsenide; Laboratories; MOSFET circuits; Nonhomogeneous media; Semiconductor materials; Temperature measurement; Threshold voltage; Voltage control;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22765
Filename :
1485982
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1110543
