Title :
IIB-2 fabrication of fully self-aligned 3-D CMOS structures by high dose nitrogen ion implantation
fDate :
11/1/1986 12:00:00 AM
Keywords :
Circuit analysis; Fabrication; Implants; Ion implantation; Isolation technology; MOSFETs; Nitrogen; Optical materials; Silicon on insulator technology; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22766
