DocumentCode :
1110580
Title :
IIB-4 a high-speed, low-power buried-oxide SOI CMOS technology
Author :
Colinge, J.P. ; Kamins, Theodore I. ; Chiang, S.Y. ; Liu, Deming ; Peng, S. ; Rissman, P. ; Hashimoto, Koji
Volume :
33
Issue :
11
fYear :
1986
fDate :
11/1/1986 12:00:00 AM
Firstpage :
1842
Lastpage :
1842
Keywords :
Annealing; CMOS technology; Circuit testing; Lithography; MOSFETs; Research and development; Ring oscillators; Telecommunications; Titanium; Voltage-controlled oscillators;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22768
Filename :
1485985
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1110580
