Title :
IIB-5 Characteristics of thin film poly-Si MOSFET´s as a function of process conditions and high field stress
Author :
Rodder, M. ; Antoniadis, Dimitri A. ; Scholz, F. ; Kalnitsky, Alex
fDate :
11/1/1986 12:00:00 AM
Keywords :
Amorphous materials; Degradation; Epitaxial growth; Leakage current; Semiconductor films; Solids; Stress; Telecommunications; Transistors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22770
