Title :
IIB-8 SOI edge parasitics and their couplings
fDate :
11/1/1986 12:00:00 AM
Keywords :
Amorphous materials; Annealing; Crystallization; Doping; Fabrication; Impurities; Leakage current; Silicon on insulator technology; Solids; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22771
