IIB-7 Fabrication of Si-gate MOSFET´s on a Silicon-on-insulator formed by lateral solid phase epitaxy

Author

Katoh, T. ; Hirashita, N. ; Sasaki, Motoharu ; Onoda, Hiroshi

Volume

Issue

fYear

1986

fDate

11/1/1986 12:00:00 AM

Firstpage

1843

Lastpage

1843

Keywords

Annealing; Crystallization; Doping; Epitaxial growth; Fabrication; Leakage current; Silicon on insulator technology; Solids; Substrates; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

DOI

10.1109/T-ED.1986.22772

Filename

1485989

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