Title :
IIB-7 Fabrication of Si-gate MOSFET´s on a Silicon-on-insulator formed by lateral solid phase epitaxy
Author :
Katoh, T. ; Hirashita, N. ; Sasaki, Motoharu ; Onoda, Hiroshi
fDate :
11/1/1986 12:00:00 AM
Keywords :
Annealing; Crystallization; Doping; Epitaxial growth; Fabrication; Leakage current; Silicon on insulator technology; Solids; Substrates; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22772
