Title :
Low power all-optical polarisation gate switch in a passive InGaAsP MQW waveguide at 1.53 μm
Author :
Snow, P.A. ; Jiang, Z. ; Penty, Richard V. ; White, Ian H. ; Davies, D.A.O. ; Fisher, M.A. ; Adams, M.J.
fDate :
6/23/1994 12:00:00 AM
Abstract :
Optimised design of an InGaAsP multiquantum well waveguide has allowed the demonstration of all-optical switching of a 30 ps pulse with coupled peak powers of 350 mW. This is achieved at 1.53 μm using resonant bandfilling and plasma effect refractive nonlinearities
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; integrated optics; light polarisation; optical switches; optical waveguides; semiconductor quantum wells; 1.53 micron; 30 ps; 350 mW; InGaAsP; all-optical switching; low power polarisation gate switch; optimised design; passive InGaAsP MQW waveguide; plasma effect refractive nonlinearities; pulse; resonant bandfilling;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940745
