Title :
IIIA-2 Simulation and analysis of recombination and grading effects in GaAlAs/GaAs HBT´s
Author :
Tiwari, Sunita ; Frank, David J.
fDate :
11/1/1986 12:00:00 AM
Keywords :
Analytical models; Degradation; Doping; Electroluminescent devices; Electron emission; Gallium arsenide; Heterojunction bipolar transistors; Spontaneous emission; Temperature; Thickness measurement;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22775
