مرکز منطقه ای اطلاع رساني علوم و فناوري - IIIA-4 GaAs inversion-base bipolar transistor (GaAs IBT)

DocumentCode :

1110679

Title :

IIIA-4 GaAs inversion-base bipolar transistor (GaAs IBT)

Author :

Matsumoto, Kaname ; Hayashi, Yasuhiro ; Hashizume, Nobuya ; Kato, Masaaki ; Miyashita, Tadakazu ; Fukuhara, N.

Volume :

Issue :

fYear :

1986

fDate :

11/1/1986 12:00:00 AM

Firstpage :

1845

Lastpage :

1845

Keywords :

Annealing; Bipolar transistors; Conductivity; Doping; Electrodes; Electrons; Fabrication; Gallium arsenide; Laboratories; Ohmic contacts;

fLanguage :

English

Journal_Title :

Electron Devices, IEEE Transactions on

Publisher :

ieee

ISSN :

0018-9383

Type :

jour

DOI :

10.1109/T-ED.1986.22776

Filename :

1485993

Link To Document :