Title :
1.3 W CW diffraction-limited monolithically integrated master oscillator flared amplifier at 863 nm [Comment and Reply]
Author :
Botez, D. ; O´Brien, Stephen
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI
fDate :
6/23/1994 12:00:00 AM
Abstract :
The Letter of S.O´Brien et. al. (see ibid., vol.29, pp.2109-2110) described the demonstration of a monolithic diode laser producing over 1 W CW of high Strehl ratio, diffraction-limited power in the 860 nm wavelength range. In this article D. Botez makes some comments regarding the comparative performance of prior work and the stability of the monolithically integrated flared amplifier master oscillator power amplifier (MFA MOPA). S.O´Brien then replies to his comments
Keywords :
integrated optics; semiconductor lasers; 1.3 W; 863 nm; CW diffraction-limited power; MFA MOPA; Strehl ratio; diode laser; monolithically integrated flared amplifier master oscillator power amplifier; stability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940731
