• DocumentCode
    1110682
  • Title

    1.3 W CW diffraction-limited monolithically integrated master oscillator flared amplifier at 863 nm [Comment and Reply]

  • Author

    Botez, D. ; O´Brien, Stephen

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI
  • Volume
    30
  • Issue
    13
  • fYear
    1994
  • fDate
    6/23/1994 12:00:00 AM
  • Firstpage
    1053
  • Lastpage
    1054
  • Abstract
    The Letter of S.O´Brien et. al. (see ibid., vol.29, pp.2109-2110) described the demonstration of a monolithic diode laser producing over 1 W CW of high Strehl ratio, diffraction-limited power in the 860 nm wavelength range. In this article D. Botez makes some comments regarding the comparative performance of prior work and the stability of the monolithically integrated flared amplifier master oscillator power amplifier (MFA MOPA). S.O´Brien then replies to his comments
  • Keywords
    integrated optics; semiconductor lasers; 1.3 W; 863 nm; CW diffraction-limited power; MFA MOPA; Strehl ratio; diode laser; monolithically integrated flared amplifier master oscillator power amplifier; stability;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940731
  • Filename
    294793