Title :
IIIA-5 AlGaAs/GaAs heterostructure bipolar transistor with nonalloyed graded-gap ohmic contacts to the base and emitter
Author :
Rao, Muhammad Anwer ; Long, S.I. ; Kroemer, H.
fDate :
11/1/1986 12:00:00 AM
Keywords :
Bipolar transistors; Conductivity; Contact resistance; Doping; Electron mobility; Gallium arsenide; Heterojunction bipolar transistors; Metallization; Molecular beam epitaxial growth; Ohmic contacts;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22777
