Title :
IIIA-6 high-frequency performance of AlGaAs/InGaAs/GaAs strained layer heterojunction bipolar transistors
Author :
Sullivan, G.J. ; Asbeck, P.M. ; Chang, M.F. ; Miller, Douglas L. ; Wang, K.C.
fDate :
11/1/1986 12:00:00 AM
Keywords :
Bipolar transistors; Doping; Electron mobility; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Molecular beam epitaxial growth; Power dissipation; Propagation delay; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22778
