Title :
IIIB-1 performance of MOS devices and integrated circuits with gate oxides grown by rapid thermal oxidation
Author :
Nulman, J. ; Krusius, J.P. ; Baldwin, Alexander
fDate :
11/1/1986 12:00:00 AM
Keywords :
Dielectric breakdown; Dielectric thin films; Gas lasers; MOS devices; MOSFETs; Optical device fabrication; Oxidation; Random access memory; Rapid thermal processing; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22780
