DocumentCode :
1110734
Title :
IIIB-2 The fabrication submicrometer MOSFET´s using laser doping
Author :
Bezjian, K. ; Simon, Terry W. ; Magee, T.
Volume :
33
Issue :
11
fYear :
1986
fDate :
11/1/1986 12:00:00 AM
Firstpage :
1847
Lastpage :
1847
Keywords :
Boron; Doping; Electron devices; Gas lasers; Implants; Laser beams; MOSFETs; Optical device fabrication; Optical pulses; Silicon;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22782
Filename :
1485999
Link To Document :
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