Title :
1.8 GHz current-controlled oscillator IC implemented by using integrated inductors and 0.8 μm BiCMOS technology
Author :
Tarvainen, E. ; Ronkainen, H. ; Kattelus, H. ; Riihisaari, T. ; Kuivalainen, P.
Author_Institution :
VTT Electron., Finland
fDate :
8/1/1996 12:00:00 AM
Abstract :
On-chip planar inductors and 18 GHz n-p-n bipolar transistors are used to implement a simple monolithic LC current-controlled oscillator which has a 200 MHz tuning range at 1.8 GHz. To save chip area, the integrated capacitors were fabricated above the planar inductor structure. The measured quiescent power dissipation is 3.5 mW from a supply of 3.5 V, and the phase noise is -85 dBc/Hz at 100 kHz offset
Keywords :
BiCMOS analogue integrated circuits; UHF integrated circuits; UHF oscillators; circuit tuning; phase noise; variable-frequency oscillators; 0.8 micron; 1.8 GHz; 3.5 V; 3.5 mW; BiCMOS technology; NPN bipolar transistors; Si; UHF; current-controlled oscillator IC; integrated capacitors; integrated inductors; monolithic LC oscillator; onchip planar inductors; phase noise; tuning range;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960974
