Physics and applications of GexSi1-x/Si strained-layer heterostructures

This paper reviews recent advances in our current level of understanding of the physics underlying transport and optical properties of GexSi1-x/Si strained-layer heterostructures. Included are discussions of critical (maximum) layer thicknesses, effects of coherency strain on the bandgaps of both Si and GexSi1-xand the influence of layer strains on the band alignments of GexSi1-x/Si strained-layer heterostructures. Transport studies will center on the modulation doping results of both n and p type heterostructures. Indeed, these earlier transport studies provided essential information which led to an understanding of the band-alignment in these strained layer heterostructures. Recent measurements of the indirect bandgap of GexSi1-xstrained layers on