Title :
IIIB-3 Limited reaction processing: In-situ epitaxial silicon thin-oxide polysilicon layers for MOS transistors
Author :
Sturm, James C. ; Gronet, C.M. ; Gibbons, J.F.
fDate :
11/1/1986 12:00:00 AM
Keywords :
Capacitive sensors; Epitaxial growth; Gases; Insulation; MOSFETs; Nonhomogeneous media; Oxidation; Silicon; Temperature control; Tin;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22783
