DocumentCode :
1110763
Title :
IIIB-6 the dependence of MOSFET output resistance on drain doping profiles
Author :
Fu-Chieh Hsu
Volume :
33
Issue :
11
fYear :
1986
fDate :
11/1/1986 12:00:00 AM
Firstpage :
1848
Lastpage :
1849
Keywords :
CMOS process; Circuit simulation; Doping profiles; Integrated circuit interconnections; MOSFET circuits; Semiconductor process modeling; Silicides; Tin; Titanium; Transconductance;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22784
Filename :
1486001
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1110763
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