Title :
Very high characteristic temperature and constant differential quantum efficiency 1.3 μm GaInAsP/InP strained-layer quantum well lasers by use of temperature dependent reflectivity (TDR) mirror
Author :
Kasukawa, A. ; Iwai, N. ; Yamanaka, N.
Author_Institution :
Furukawa Electr. Co. Ltd., Yokohama
fDate :
6/23/1994 12:00:00 AM
Abstract :
A very high characteristic temperature of 150K (25-70°C) or 450K (25-50°C) and almost constant differential quantum efficiency operation were achieved in 1.3 μm GaInAsP/InP strained-layer quantum well lasers by the use of a novel temperature dependent reflectivity mirror composed of multiple quarter-wavelength thickness a-Si/SiOx dielectric films with quarter-wavelength shift in the centre
Keywords :
Debye temperature; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser accessories; mirrors; semiconductor lasers; 1.3 mum; 150 K; 450 K; GaInAsP-InP; GaInAsP/InP; a-Si/SiOx dielectric films; constant differential quantum efficiency; constant differential quantum efficiency operation; mirror; multiple quarter-wavelength thickness; quarter-wavelength shift; strained-layer quantum well lasers; temperature dependent reflectivity; temperature dependent reflectivity mirror; very high characteristic temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940743
