Title :
IVA-2 in situ mobility profiling of short channel field-effect transistors using the Hall current technique
Author :
Andreou, A.G. ; Westgate, Charles R. ; Thoma
fDate :
11/1/1986 12:00:00 AM
Keywords :
Computer science; Current measurement; FETs; Gallium arsenide; Geometry; Hall effect; Magnetic field measurement; Magnetic materials; Silicon; Transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22790
