DocumentCode :
1110834
Title :
IVA-3 Parasitic corrections for mobility profiling of large-periphery GaAs power FET´s
Author :
Lau, Kei May
Volume :
33
Issue :
11
fYear :
1986
fDate :
11/1/1986 12:00:00 AM
Firstpage :
1850
Lastpage :
1851
Keywords :
Active noise reduction; Electrical resistance measurement; FETs; Gallium arsenide; Implants; MESFETs; Magnetic field measurement; Noise generators; Power engineering computing; Semiconductor device noise;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1986.22791
Filename :
1486008
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1110834
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