Title :
IVA-5 ion implanted GaAs p-channel MESFET with Schottky-barrier height enhancement
Author :
Lee, G.Y. ; Baier, S.M. ; Chung, Hyun Kyu ; Fure, B.J.
fDate :
11/1/1986 12:00:00 AM
Keywords :
FETs; Fabrication; Gallium arsenide; HEMTs; Implants; Logic; MESFET circuits; MODFETs; Pulse inverters; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22793
