Title :
IVA-8 60-GHz GaAs low-noise MESFET´s by molecular-beam epitaxy
Author :
Chao, P.C. ; Smith, P.M. ; Duh, K.H.G. ; Hwang, James C. M.
fDate :
11/1/1986 12:00:00 AM
Keywords :
Current measurement; Frequency; Gain measurement; Gallium arsenide; Leakage current; MESFETs; Molecular beam epitaxial growth; Noise figure; Performance gain; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1986.22794
